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Effect of Nb Doping on Crystalline Orientation, Electric and Fatigue Properties of PZT Thin Films Prepared by Sol-Gel Process
Q. Li, X. Wang, F. Wang, J. Dou, W. Xu, H. Zou
Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology, Dalian 116024, People's Republic of China
received May 8, 2017, received in revised form August 22, 2017, accepted November 6, 2017
Vol. 8, No. 4, Pages 519-524 DOI: 10.4416/JCST2017-00031
Abstract
Pb(NbxZr0.52Ti0.48)O3 (PNZT) (x = 0 %, 1 %, 2 %, 3 %, 4 %, 5 %) thin films were prepared in a sol-gel process to investigate the effects of Nb doping on the crystalline orientation, electric and fatigue properties of lead zirconate titanate (PZT) films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that PNZT films with Nb doping concentration below 5 % exhibited a dense perovskite structure with (100) preferred orientation. The maximum dielectric constant was obtained in 4 % Nb-doped PZT film with a precision impedance analyzer. Remnant polarization and fatigue resistance were enhanced significantly with 2 % Nb dopant.
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Keywords
PNZT thin films, (100) preferred orientation, microstructure, fatigue resistance, sol-gel process
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