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High Permittivity and Dielectric Response of CaCu3Ti3.9(Y0.5Nb0.5)0.1O12 Ceramics
Y. Liu, X. Huang
School of Civil Engineering, Shaoguan University, Shaoguan 512005, China
received November 19, 2016, received in revised form January 9, 2017, accepted March 1, 2017
Vol. 8, No. 2, Pages 243-248 DOI: 10.4416/JCST2016-00112
Abstract
CaCu3Ti3.9(Y0.5Nb0.5)0.1O12 (CCTYNO) ceramics were prepared with the conventional solid-state method. Dielectric properties and electric responses at temperatures from - 80 to 200 °C were investigated in the frequency range of 100 – 1 MHz. A body-centered cubic structure was confirmed by means of X-ray diffraction. High dielectric permittivity (∼ 6000) and low dielectric loss (∼ 0.082) were observed at room temperature. Impedance spectroscopy measurements showed the resistance of the grain boundaries is higher by 2 – 3 orders of magnitude than that of the grains, indicating the different microstructure and electric property. The activation energy for the dc conduction process (0.593 eV) is comparable to that for the relaxation process (0.662 eV), implying that strong interfacial polarization at insulating grain boundaries may be responsible for the dielectric response of CCTYNO ceramic. Polyvalent cations (i.e. Cu+, Cu2+, Ti3+ and Ti4+) may cause changes in the conduction of semiconducting grains at high temperature.
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Keywords
Dielectric properties, impedance, co-doping, grain boundary, interfacial polarization
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